N-channel MOSFET featuring 30V drain-source voltage and 6.5A continuous drain current. Offers fast switching with 8ns turn-on delay and 12ns fall time, and a low 19.5mR Rds(on) at 1.8V Vgs. Surface mountable in a 3.3mm x 3.3mm package, this RoHS compliant component operates from -55°C to 150°C with a 1.5W power dissipation.
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI7326DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Resistance | 195mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.04mm |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 19.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 8ns |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7326DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7326DN-T1-GE3 to view detailed technical specifications.
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