The SI7344DP-T1-E3 is a N-CHANNEL TrenchFET MOSFET with a drain to source breakdown voltage of 20V and a continuous drain current of 11A. It has a drain to source resistance of 8mR and a maximum operating temperature of 150°C. The device is surface mount and RoHS compliant. The MOSFET has a maximum power dissipation of 1.8W and a turn-off delay time of 40ns. It is suitable for use in a variety of applications where a high current and low resistance are required.
MountingSurface Mount
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
Vishay SI7344DP-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7344DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7344DP-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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