N-channel MOSFET, 30V drain-source voltage, 31A continuous drain current, and 83W maximum power dissipation. Features low 3mΩ drain-source on-resistance at 10V gate-source voltage. This surface-mount component offers fast switching with 25ns turn-on delay and 31ns fall time. Operating temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7356ADP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 31A |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3mR |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 6.215nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7356ADP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7356ADP-T1-GE3 to view detailed technical specifications.
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