N-CHANNEL MOSFET, 30V Vdss, 14A continuous drain current, and 4.2mΩ Rds On at 10V. Features low 21ns turn-on delay and 83ns turn-off delay, with a 27ns fall time. Surface mount package with 1.9W max power dissipation and 150°C max operating temperature.
Resistance0.0042R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7358ADP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 4.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 4.65nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 4.2mR |
| Resistance | 0.0042R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 83ns |
| Turn-On Delay Time | 21ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7358ADP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7358ADP-T1-GE3 to view detailed technical specifications.
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