N-channel MOSFET with 30V drain-source voltage and 40A continuous drain current. Features 3mΩ maximum drain-source on-resistance at 10V gate-source voltage, 83W maximum power dissipation, and a 35ns fall time. Surface mountable in a SOIC package, this component operates from -55°C to 150°C and is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7380ADP-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.04mm |
| Input Capacitance | 7.785nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Nominal Vgs | 600mV |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7380ADP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7380ADP-T1-E3 to view detailed technical specifications.
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