N-channel MOSFET transistor, 30V Vdss, 19A continuous drain current, and 7mΩ maximum drain-source on-resistance. Features include a 2.5V threshold voltage, 12ns turn-on delay, and 9ns fall time. This surface-mount component operates from -55°C to 150°C, with a maximum power dissipation of 1.8W. Packaged in Tape and Reel, it is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7386DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 19A |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7386DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7386DP-T1-GE3 to view detailed technical specifications.
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