N-channel MOSFET with 30V drain-source breakdown voltage and 12A continuous drain current. Features low 7mΩ drain-source on-resistance and 1.9W power dissipation. Operates from -55°C to 150°C, with fast switching times including 14ns turn-on and 10ns fall times. Surface mountable in an 8-pin PowerPAK SO package, supplied on tape and reel. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Vishay SI7388DP-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.042inch |
| Lead Free | Lead Free |
| Length | 0.235inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 14ns |
| Width | 0.197inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7388DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7388DP-T1-E3 to view detailed technical specifications.
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