Quick Jump:
Technical Specifications
Vishay SI7392ADP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 17.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.465nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27.5W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7392ADP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7392ADP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.