P-channel MOSFET, 12V Vdss, 13.5A continuous drain current, and 13mΩ maximum drain-source on-resistance. Features a 3.05mm x 3.05mm x 1.04mm PPAK 1212-8 surface mount package. Offers fast switching with 22ns turn-on delay and 45ns fall time, operating from -55°C to 150°C. This RoHS compliant component supports a maximum power dissipation of 33W.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7405BDN-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 13.5A |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 13mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 22ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7405BDN-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7405BDN-T1-E3 to view detailed technical specifications.
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