The SI7409ADN-T1-E3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.5W and is lead free. The device is packaged in a SMALL OUTLINE, S-XDSO-C5 package and is available in quantities of 3000. It is RoHS compliant and has a drain to source resistance of 19mR.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7409ADN-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 7A |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 19mR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7409ADN-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7409ADN-T1-E3 to view detailed technical specifications.
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