P-channel MOSFET, 20V Vds, 12A continuous drain current, and 7.7mΩ Rds On. This surface mount device features a 4.9mm length, 5.89mm width, and 1.04mm height in an SOIC package. It operates from -55°C to 150°C with a maximum power dissipation of 1.9W. Turn-on delay is 40ns, fall time is 45ns, and turn-off delay is 400ns.
Vishay SI7445DP-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 7.7mR |
| Drain to Source Voltage (Vdss) | -20V |
| Dual Supply Voltage | -20V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.9W |
| Rds On Max | 7.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 400ns |
| Turn-On Delay Time | 40ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7445DP-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.