N-channel power MOSFET with 100V drain-source breakdown voltage and 5A continuous drain current. Features low 34mΩ drain-source on-resistance at a nominal 4V gate-source voltage. This surface-mount device is housed in a leadless POWERPAK SOP-8 package, offering a maximum power dissipation of 1.9W. Operates across a wide temperature range from -55°C to 150°C.
PackageSOIC
Voltage100V
Current5A
MountingSurface Mount
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Technical Specifications
Vishay SI7454DP-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5A
Current
5A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
34mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
34mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1.9W
Radiation Hardening
No
Rds On Max
34mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
4V
Turn-Off Delay Time
35ns
Turn-On Delay Time
16ns
Voltage
100V
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7454DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7454DP-T1-E3 to view detailed technical specifications.
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