N-channel power MOSFET featuring 100V drain-source voltage and 5.7A continuous drain current. Offers a low 25mΩ drain-source on-resistance. Designed for surface mounting in an SOIC package with a 1.9W maximum power dissipation. Includes fast switching characteristics with a 14ns turn-on delay and 10ns fall time. RoHS compliant and operates within a -55°C to 150°C temperature range.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7456DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.7A
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
25MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
46ns
Turn-On Delay Time
14ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7456DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7456DP-T1-GE3 to view detailed technical specifications.
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