P-channel MOSFET with 60V drain-source voltage and 3.2A continuous drain current. Features low 64mΩ drain-source on-resistance and 1.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in an 8-pin SOIC package, supplied on tape and reel. Includes fast switching characteristics with 8ns turn-on and 9ns fall times.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7465DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.2A
Drain to Source Resistance
64mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
64MR
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
64mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
65ns
Turn-On Delay Time
8ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7465DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7465DP-T1-GE3 to view detailed technical specifications.
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