P-channel MOSFET featuring 20V drain-source breakdown voltage and 12.5A continuous drain current. Offers low 7.3mΩ drain-source on-resistance and 1.8W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in an SOIC package, supplied on tape and reel.
PackageSOIC
Voltage20V
Current20A
MountingSurface Mount
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Technical Specifications
Vishay SI7485DP-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
12.5A
Current
20A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
7.3mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
7.3mR
Fall Time
170ns
Gate to Source Voltage (Vgs)
8V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.8W
Mount
Surface Mount
Nominal Vgs
-900mV
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.8W
Radiation Hardening
No
Rds On Max
7.3mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-900mV
Turn-Off Delay Time
360ns
Turn-On Delay Time
80ns
Voltage
20V
Compliance
RoHS
Compliant
Datasheet
Vishay SI7485DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7485DP-T1-E3 to view detailed technical specifications.
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