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Technical Specifications
Vishay SI7530DP-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 9ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7530DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7530DP-T1-E3 to view detailed technical specifications.
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