MountingSurface Mount
PolarityP-CHANNEL
Power3.5W
Quick Jump:
Technical Specifications
Vishay SI7530DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 30ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.5W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7530DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7530DP-T1-GE3 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
