The SI7601DN-T1-E3 is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -50°C. It features a continuous drain current of 16A and a drain to source resistance of 19mR. The device has a maximum power dissipation of 52W and is packaged in a surface mount configuration. It is RoHS compliant and available in a quantity of 3000 per reel.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7601DN-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.04mm |
| Input Capacitance | 1.87nF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 19.2mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 18ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7601DN-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7601DN-T1-E3 to view detailed technical specifications.
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