P-channel MOSFET with -40V Drain-Source Voltage and 9.3A Continuous Drain Current. Features 25mΩ Max Drain-Source On-Resistance and 39W Max Power Dissipation. Operates from -50°C to 150°C, with a 1.04mm height and 3.05mm x 3.05mm dimensions. This surface-mount component is supplied in tape and reel packaging.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7611DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
9.3A
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
25mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
1.98nF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
39W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7611DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7611DN-T1-GE3 to view detailed technical specifications.
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