P-channel MOSFET with -40V Drain-Source Voltage and 9.3A Continuous Drain Current. Features 25mΩ Max Drain-Source On-Resistance and 39W Max Power Dissipation. Operates from -50°C to 150°C, with a 1.04mm height and 3.05mm x 3.05mm dimensions. This surface-mount component is supplied in tape and reel packaging.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7611DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 9.3A |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 25mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.98nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 39W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7611DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7611DN-T1-GE3 to view detailed technical specifications.
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