P-channel MOSFET for surface mount applications, featuring a 20V drain-source voltage and 17A continuous drain current. Offers a low 8.7mΩ drain-to-source resistance and a maximum power dissipation of 52.1W. Operates across a wide temperature range from -55°C to 150°C. This component boasts fast switching characteristics with a 9ns fall time, 14ns turn-on delay, and 42ns turn-off delay. Packaged in a compact 3.05mm x 3.05mm x 1.04mm PowerPAK 1212, it is supplied on tape and reel and is RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7613DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
17A
Drain to Source Resistance
8.7mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
9ns
Gate to Source Voltage (Vgs)
16V
Height
1.04mm
Input Capacitance
2.62nF
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52.1W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
8.7mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
42ns
Turn-On Delay Time
14ns
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7613DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7613DN-T1-GE3 to view detailed technical specifications.
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