P-channel MOSFET for surface mount applications, featuring a 20V drain-source voltage and 17A continuous drain current. Offers a low 8.7mΩ drain-to-source resistance and a maximum power dissipation of 52.1W. Operates across a wide temperature range from -55°C to 150°C. This component boasts fast switching characteristics with a 9ns fall time, 14ns turn-on delay, and 42ns turn-off delay. Packaged in a compact 3.05mm x 3.05mm x 1.04mm PowerPAK 1212, it is supplied on tape and reel and is RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI7613DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 17A |
| Drain to Source Resistance | 8.7mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.04mm |
| Input Capacitance | 2.62nF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 8.7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 14ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7613DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7613DN-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
