P-channel Power MOSFET featuring TrenchFET technology, designed for surface mount applications. This single, enhancement-mode MOSFET offers a maximum drain-source voltage of 20V and a continuous drain current of 35A. Housed in an 8-pin PowerPAK 1212 package with a 3.05mm x 3.05mm footprint, it boasts a low seated plane height of 1.04mm. Key electrical characteristics include a maximum drain-source on-resistance of 4.4 mOhm at 10V and a typical gate charge of 122 nC at 10V.
PackagePowerPAK 1212
MountingSurface Mount
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Technical Specifications
Vishay Si7615ADN-T1-GE3 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
PowerPAK 1212
Package/Case
PowerPAK 1212
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
3.05
Package Width (mm)
3.05
Package Height (mm)
1.07(Max)
Seated Plane Height (mm)
1.04
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
TrenchFET
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
35A
Maximum Gate Threshold Voltage
1.5V
Maximum Drain Source Resistance
4.4@10VmOhm
Typical Gate Charge @ Vgs
[email protected]|122@10VnC
Typical Gate Charge @ 10V
122nC
Typical Input Capacitance @ Vds
5590@10VpF
Maximum Power Dissipation
3700mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
640pF
Compliance
Cage Code
18612
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay Si7615ADN-T1-GE3 Datasheet
Download the complete datasheet for Vishay Si7615ADN-T1-GE3 to view detailed technical specifications.
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