P-channel MOSFET with -20V drain-source voltage and -35A continuous drain current. Features low 4.4mR drain-source on-resistance and 52W maximum power dissipation. Operates from -55°C to 150°C, suitable for surface mount applications. Includes fast switching characteristics with 26ns fall time, 41ns turn-on delay, and 75ns turn-off delay.
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI7615ADN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -35A |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 4.4mR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.12mm |
| Input Capacitance | 5.59nF |
| Lead Free | Lead Free |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 41ns |
| Width | 3.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7615ADN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7615ADN-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
