P-channel MOSFET with 30V drain-source voltage and 24A continuous drain current. Features low 17.5mΩ drain-source resistance and 21mΩ maximum Rds On. Operates from -55°C to 150°C with a maximum power dissipation of 27.8W. Surface mountable in an 8-pin PowerPAK 1212 package, supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7619DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 24A |
| Drain to Source Resistance | 17.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 21mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 21mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7619DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7619DN-T1-GE3 to view detailed technical specifications.
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