P-channel Power MOSFET with 30V drain-source voltage and 24A continuous drain current. Features an 8-pin PowerPAK 1212 surface-mount package with a 3.05mm x 3.05mm footprint and 1.07mm maximum height. Configuration is single quad drain triple source with enhancement mode channel. Maximum power dissipation is 3500mW, operating temperature range from -55°C to 150°C.
PackagePowerPAK 1212
MountingSurface Mount
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Technical Specifications
Vishay Si7619DN-T1-GE3 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
PowerPAK 1212
Package/Case
PowerPAK 1212
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
3.05
Package Width (mm)
3.05
Package Height (mm)
1.07(Max)
Seated Plane Height (mm)
1.04
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
24A
Maximum Gate Threshold Voltage
3V
Maximum Drain Source Resistance
21@10VmOhm
Typical Gate Charge @ Vgs
32@10V|[email protected]nC
Typical Gate Charge @ 10V
32nC
Typical Input Capacitance @ Vds
1350@15VpF
Maximum Power Dissipation
3500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
215pF
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay Si7619DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay Si7619DN-T1-GE3 to view detailed technical specifications.
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