N-channel MOSFET transistor featuring 150V drain-source voltage and 3.6A continuous drain current. Surface mount device with a maximum power dissipation of 5.2W and 33W (typical). Offers a low drain-source on-resistance of 103mR at 10V, with a maximum of 126mR. Packaged in an 8-pin PowerPAK 1212-8 for tape and reel distribution, operating from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power33W
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Technical Specifications
Vishay SI7620DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
3.6A
Drain to Source Resistance
103mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
126MR
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
0.042inch
Input Capacitance
600pF
Lead Free
Lead Free
Length
0.124inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5.2W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
33W
Radiation Hardening
No
Rds On Max
126mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
15ns
Turn-On Delay Time
12ns
Width
0.124inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI7620DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7620DN-T1-GE3 to view detailed technical specifications.
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