Surface mount P-channel enhancement mode power MOSFET with 20V drain-source voltage and 4A continuous drain current. Features an 8-pin PowerPAK 1212 package (3.05x3.05x1.04mm) with no leads and a 0.65mm pin pitch. Offers a maximum drain-source on-resistance of 90mOhm at 4.5V gate-source voltage. Operates across a temperature range of -55°C to 150°C.
PackagePowerPAK 1212
MountingSurface Mount
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Technical Specifications
Vishay Si7621DN-T1-GE3 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
PowerPAK 1212
Package/Case
PowerPAK 1212
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
3.05
Package Width (mm)
3.05
Package Height (mm)
1.04
Seated Plane Height (mm)
1.04
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
4A
Maximum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
4.1@5V|[email protected]nC
Typical Input Capacitance @ Vds
300@10VpF
Maximum Power Dissipation
3100mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
95pF
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay Si7621DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay Si7621DN-T1-GE3 to view detailed technical specifications.
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