P-channel MOSFET with -30V drain-source voltage and 35A continuous drain current. Features low 7mR drain-source on-resistance and 52W maximum power dissipation. Operates from -55°C to 150°C, suitable for surface mount applications. Packaged in tape and reel for automated assembly.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7625DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
35A
Drain to Source Resistance
7mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
7MR
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.427nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Compliance
RoHS
Compliant
Datasheet
Vishay SI7625DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7625DN-T1-GE3 to view detailed technical specifications.
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