P-channel MOSFET with -30V drain-source voltage and 35A continuous drain current. Features low 7mR drain-source on-resistance and 52W maximum power dissipation. Operates from -55°C to 150°C, suitable for surface mount applications. Packaged in tape and reel for automated assembly.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7625DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 7MR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.427nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7625DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7625DN-T1-GE3 to view detailed technical specifications.
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