P-channel MOSFET with 20V drain-source voltage and 60A continuous drain current. Features low 4.4mΩ drain-to-source resistance and 104W maximum power dissipation. Designed for surface mounting with a compact 5.89mm x 4.9mm x 1.04mm footprint. Operates across a wide temperature range from -55°C to 150°C.
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI7633DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
60A
Drain to Source Resistance
4.4mR
Drain to Source Voltage (Vdss)
20V
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
9.5nF
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
104W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
3.3mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
100ns
Turn-On Delay Time
100ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7633DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7633DP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.