Vishay
SI7634DP-T1-E3
Power Field-Effect Transistor, 23A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SO-8
Resistance0.0052R
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7634DP-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 23A |
| Drain to Source Resistance | 5.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 83ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Resistance | 0.0052R |
| RoHS Compliant | Yes |
| Series | SI7 |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7634DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7634DP-T1-E3 to view detailed technical specifications.
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