The SI7636DP-T1-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.9W and a maximum drain to source voltage of 30V. The device features a drain to source resistance of 4mR and a maximum continuous drain current of 17A. It is RoHS compliant and available in a package quantity of 3000 units per reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7636DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 17A |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7636DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7636DP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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