P-channel MOSFET with -20V drain-source voltage and -40A continuous drain current. Features 3.6mΩ drain-to-source resistance and 12V gate-to-source voltage. Surface mountable in a PPAK 1212 package, offering 57W maximum power dissipation. Operates across a -50°C to 150°C temperature range.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7655DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -40A |
| Drain to Source Resistance | 3.6mR |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.78mm |
| Input Capacitance | 6.6nF |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -500mV |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 45ns |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7655DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7655DN-T1-GE3 to view detailed technical specifications.
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