P-channel MOSFET with -20V drain-source voltage and -40A continuous drain current. Features 3.6mΩ drain-to-source resistance and 12V gate-to-source voltage. Surface mountable in a PPAK 1212 package, offering 57W maximum power dissipation. Operates across a -50°C to 150°C temperature range.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7655DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
-40A
Drain to Source Resistance
3.6mR
Drain to Source Voltage (Vdss)
-20V
Gate to Source Voltage (Vgs)
12V
Height
0.78mm
Input Capacitance
6.6nF
Length
3.3mm
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
57W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
3.6mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-500mV
Turn-Off Delay Time
110ns
Turn-On Delay Time
45ns
Width
3.3mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7655DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7655DN-T1-GE3 to view detailed technical specifications.
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