N-Channel MOSFET with 30V Drain-Source Voltage and 31A Continuous Drain Current. Features low 3mΩ Drain-Source Resistance at 10V Vgs and 5.4W Power Dissipation. Surface mount component with 83W maximum power dissipation, operating from -55°C to 150°C. Includes 14ns fall time and 56ns turn-off delay time.
MountingSurface Mount
PolarityN-CHANNEL
Power5.4W
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Technical Specifications
Vishay SI7668ADP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 31A |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.04mm |
| Input Capacitance | 8.82nF |
| Length | 5.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.4W |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 33ns |
| Weight | 0.01787oz |
| Width | 6.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7668ADP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7668ADP-T1-GE3 to view detailed technical specifications.
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