N-channel MOSFET transistor, 30V Vdss, 16A continuous drain current, and 13.5mR max Rds On. Features a 2.5V threshold voltage, 15ns turn-on delay, and 10ns fall time. Operates from -55°C to 150°C with a max power dissipation of 27.7W. Surface mountable in an 8-pin PowerPAK 1212 package. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7716ADN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 13.5mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 846pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 13.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 15ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7716ADN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7716ADN-T1-GE3 to view detailed technical specifications.
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