N-channel MOSFET with 30V drain-source voltage and 14.9A continuous drain current. Features low 9.5mR drain-to-source resistance and 3.8W maximum power dissipation. Operates across a -50°C to 150°C temperature range, with fast switching speeds including a 14ns fall time. Surface mountable in a 1212-8 package, this RoHS compliant component is ideal for demanding applications.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7726DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 14.9A |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.765nF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | 2.6V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Series | SkyFET®, TrenchFET® |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 23ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7726DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7726DN-T1-GE3 to view detailed technical specifications.
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