N-channel MOSFET transistor featuring 30V drain-source voltage and 23.5A continuous drain current. Offers a low 4.8mΩ drain-source on-resistance and 56W maximum power dissipation. Designed for surface mount applications with a compact 4.9mm x 5.89mm x 1.04mm PowerPAK SO package. Includes fast switching characteristics with turn-on delay of 36ns and fall time of 16ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power4.8W
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Technical Specifications
Vishay SI7748DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
23.5A
Drain to Source Resistance
4.8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
4.8mR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
3.77nF
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
56W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
4.8W
Radiation Hardening
No
Rds On Max
4.8mR
RoHS Compliant
Yes
Series
SkyFET®, TrenchFET®
Turn-Off Delay Time
44ns
Turn-On Delay Time
36ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7748DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7748DP-T1-GE3 to view detailed technical specifications.
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