N-channel MOSFET with 40V Drain-Source Voltage (Vdss) and 50A Continuous Drain Current (ID). Features low 4.5mΩ Drain-Source On-Resistance (Rds On Max) and 69W Max Power Dissipation. Operates from -55°C to 150°C, with 2.5V Threshold Voltage and 4.2nF Input Capacitance. Packaged in an 8-pin SOIC for surface mounting, this RoHS compliant component offers fast switching with 42ns Turn-On Delay and 28ns Fall Time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7790DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 4.5mR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.04mm |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 42ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7790DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7790DP-T1-GE3 to view detailed technical specifications.
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