Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PolarityN-CHANNEL
Power3.8W
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Technical Specifications
Vishay SI7806DN-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| RoHS Compliant | Yes |
| Series | SI7 |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 8ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7806DN-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7806DN-T1-E3 to view detailed technical specifications.
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