N-channel MOSFET transistor, ideal for surface mount applications. Features a 150V drain-source voltage (Vdss) and a continuous drain current (ID) of 2.2A. Offers a low drain-source on-resistance (Rds On) of 135mR at a nominal gate-source voltage (Vgs) of 4V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.5W. Packaged in an 8-pin PowerPAK 1212 for efficient thermal management.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7818DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 135mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 135MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 135mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7818DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7818DN-T1-GE3 to view detailed technical specifications.
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