N-channel MOSFET with 200V drain-source voltage and 1.7A continuous drain current. Features low 240mΩ drain-source resistance and fast switching times with 11ns turn-on and 12ns fall times. Operates from -55°C to 150°C with a maximum power dissipation of 1.5W. Surface mountable in a compact 8-pin PowerPAK 1212 package, supplied on tape and reel. RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7820DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 240mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 11ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7820DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7820DN-T1-GE3 to view detailed technical specifications.
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