N-channel MOSFET transistor featuring 150V drain-source voltage and 4A continuous drain current. Offers a low 50mΩ drain-source on-resistance at a nominal 4.5V gate-source voltage. This surface-mount component is housed in an 8-pin SOIC package, with a maximum power dissipation of 1.9W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 7ns.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.9W
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Technical Specifications
Vishay SI7846DP-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 50mR |
| Dual Supply Voltage | 150V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Nominal Vgs | 4.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7846DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7846DP-T1-E3 to view detailed technical specifications.
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