The SI7856ADP-T1-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum drain to source breakdown voltage of 30V and a maximum drain to source resistance of 3.7mR. The device can handle a continuous drain current of 15A and a maximum power dissipation of 1.9W. It is RoHS compliant and available in a tape and reel packaging with 3000 units per package.
MountingSurface Mount
PolarityN-CHANNEL
Power1.9W
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Technical Specifications
Vishay SI7856ADP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7856ADP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7856ADP-T1-GE3 to view detailed technical specifications.
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