SI7872DP-T1-E3

2 N-CH MOSFET 30V 6.4A 22mR SOIC

Dual N-channel MOSFET, 30V drain-source breakdown voltage, 6.4A continuous drain current, and 22mΩ maximum drain-source on-resistance. Features a 1.4W maximum power dissipation and operates across a -55°C to 150°C temperature range. Surface mountable in a SOIC package with dimensions of 4.9mm length, 5.89mm width, and 1.04mm height. Includes fast switching characteristics with turn-on delay of 9ns and fall time of 10ns. Lead-free and RoHS compliant.

PackageSOIC

MountingSurface Mount

PolarityN-CHANNEL

Power1.4W

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Technical Specifications

Vishay SI7872DP-T1-E3 technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	6.4A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	22mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	22mR
Fall Time	10ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	12V
Height	1.04mm
Lead Free	Lead Free
Length	4.9mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.4W
Mount	Surface Mount
Number of Channels	2
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Polarization	N
Power Dissipation	1.4W
Radiation Hardening	No
Rds On Max	22mR
RoHS Compliant	Yes
Series	SI7
Turn-Off Delay Time	40ns
Turn-On Delay Time	9ns
DC Rated Voltage	30V
Weight	0.01787oz
Width	5.89mm