N-channel power MOSFET featuring 30V drain-source voltage and 40A continuous drain current. Offers low 3mΩ drain-source on-resistance and 83W maximum power dissipation. Designed for general-purpose power applications with a 150°C maximum operating temperature. ROHS compliant, lead-free, and available in a leadless PowerPAK SOP-8 package suitable for through-hole and surface mount configurations.
PackageDIP
MountingThrough Hole, Surface Mount
PolarityN-CHANNEL
Power5.4W
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Technical Specifications
Vishay SI7880ADP-T1-E3 technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 5.6nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Through Hole, Surface Mount |
| Nominal Vgs | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.4W |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 96ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7880ADP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7880ADP-T1-E3 to view detailed technical specifications.
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