N-channel MOSFET with 12V Vdss and 22A continuous drain current. Features 5.5mOhm Rds On at 4.5V, 1.4V threshold voltage, and 1.9W max power dissipation. Packaged in SOIC for surface mounting, this component offers fast switching with turn-on delay of 28ns and fall time of 32ns. Operating temperature range is -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7882DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.4V |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 28ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7882DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7882DP-T1-GE3 to view detailed technical specifications.
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