N-Channel MOSFET with 30V Drain-Source Voltage (Vdss) and 9.4A Continuous Drain Current (ID). Features low 12mΩ Drain-Source Resistance (Rds On Max) at 10V gate drive, enabling efficient power switching. This surface-mount component offers a maximum power dissipation of 1.8W and operates across a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 11ns.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
Vishay SI7888DP-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9.4A |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.042inch |
| Length | 0.235inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 10ns |
| Width | 0.197inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7888DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7888DP-T1-E3 to view detailed technical specifications.
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