N-channel power MOSFET with 30V drain-source voltage and 15A continuous drain current. Features low 4.2mΩ drain-to-source resistance and 1.8W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a RoHS compliant, surface-mount SOIC PowerPAK with a 4.9mm length, 5.89mm width, and 1.04mm height. Ideal for general-purpose power applications.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7892BDP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 4.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 3.775nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 4.2mR |
| RoHS Compliant | Yes |
| Series | SI7 |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7892BDP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7892BDP-T1-GE3 to view detailed technical specifications.
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