N-channel MOSFET featuring 150V drain-source voltage and 3A continuous drain current. Surface mountable in a PPAK SO-8 package, this component offers a low 85mΩ drain-source on-resistance. Key switching characteristics include a 9ns turn-on delay and 10ns fall time, with a maximum power dissipation of 1.9W. Operating across a wide temperature range from -55°C to 150°C, it is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.9W
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Technical Specifications
Vishay SI7898DP-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 85mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7898DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7898DP-T1-E3 to view detailed technical specifications.
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