The SI7901EDN-T1-E3 is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.3W and is RoHS compliant. The device features a trench gate structure and is available in a surface mount package.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7901EDN-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 48mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 4000ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.04mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 48mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15000ns |
| Turn-On Delay Time | 2500ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7901EDN-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7901EDN-T1-E3 to view detailed technical specifications.
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