P-channel MOSFET featuring 40V drain-source voltage and 5A continuous drain current. Offers a maximum on-resistance of 60mΩ. Designed for surface mount applications in an 8-pin PowerPAK package, with a compact footprint of 3.05mm x 3.05mm x 1.04mm. Includes fast switching characteristics with turn-on delay of 6ns and fall time of 10ns. Operates within a temperature range of -50°C to 150°C and supports a maximum power dissipation of 20.8W.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7905DN-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 60mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 880pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 20.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 6ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7905DN-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7905DN-T1-E3 to view detailed technical specifications.
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