The SI7911DN-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4.2A and a drain to source resistance of 51mR. The device is lead free and RoHS compliant, packaged in tape and reel for surface mount applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI7911DN-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Resistance | 51mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 51mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 20ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7911DN-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
