P-channel PowerPAK 1212 MOSFET, surface mount, featuring a -20V drain-source voltage and 5A continuous drain current. Offers a low 37mΩ drain-source on-resistance and a maximum power dissipation of 1.3W. Operates across a -55°C to 150°C temperature range with fast switching characteristics, including a 20ns turn-on delay and 70ns fall time. This RoHS compliant component is supplied in tape and reel packaging.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7913DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 37mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 37MR |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 37mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 20ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7913DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7913DN-T1-GE3 to view detailed technical specifications.
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