P-Channel PowerPAK MOSFET with a -30V drain-source voltage and 4.3A continuous drain current. Features a low 47mΩ drain-to-source resistance and a 10ns turn-on delay. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 1.3W. This surface-mount component is supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI7923DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 47mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 47mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7923DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7923DN-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
